Published by Josh White on 10th April 2025
(Sharecast News) - IQE announced on Thursday that it has entered into a joint development agreement with X-FAB to create a European-based gallium nitride (GaN) power device platform, targeting the growing demand for high-voltage applications across automotive, data centre and consumer sectors.
URL: http://www.digitallook.com/dl/news/story/35005657/...